APT20N60SC3G
vs
STB26NM60N
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
STMICROELECTRONICS
Package Description
D3PAK-3
TO-263, D2PAK-3
Pin Count
3
4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas)
690 mJ
610 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
20.7 A
20 A
Drain-source On Resistance-Max
0.19 Ω
0.165 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
62 A
80 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
PURE MATTE TIN
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
D2PAK
Factory Lead Time
14 Weeks
Samacsys Manufacturer
STMicroelectronics
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
245
Power Dissipation-Max (Abs)
140 W
Time@Peak Reflow Temperature-Max (s)
30
Compare APT20N60SC3G with alternatives
Compare STB26NM60N with alternatives