STB26NM60N
vs
APT20N60SCFG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
STMICROELECTRONICS
ADVANCED POWER TECHNOLOGY INC
Part Package Code
D2PAK
Package Description
TO-263, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
14 Weeks
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
610 mJ
690 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.165 Ω
0.22 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
140 W
208 W
Pulsed Drain Current-Max (IDM)
80 A
60 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
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