APT20N60SC3
vs
STB26NM60N
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MICROSEMI CORP
STMICROELECTRONICS
Package Description
D3PAK-3
TO-263, D2PAK-3
Pin Count
3
4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Base Number Matches
2
1
Part Package Code
D2PAK
Factory Lead Time
14 Weeks
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
610 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.165 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
140 W
Pulsed Drain Current-Max (IDM)
80 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare APT20N60SC3 with alternatives
Compare STB26NM60N with alternatives