APT10050B2LC vs APT10050LVRG feature comparison

APT10050B2LC Advanced Power Technology

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APT10050LVRG Microchip Technology Inc

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description IN-LINE, R-PSIP-T3 TO-264, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 2500 mJ 2500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V 1000 V
Drain Current-Max (ID) 21 A 21 A
Drain-source On Resistance-Max 0.5 Ω 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A 84 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 43 Weeks
Additional Feature HIGH VOLTAGE
JEDEC-95 Code TO-264AA
JESD-609 Code e1
Operating Temperature-Max 150 °C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

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