APT10050LVRG
vs
APT10050B2VR
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
ADVANCED POWER TECHNOLOGY INC
|
| Package Description |
TO-264, 3 PIN
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
43 Weeks
|
|
| Additional Feature |
HIGH VOLTAGE
|
HIGH VOLTAGE
|
| Avalanche Energy Rating (Eas) |
2500 mJ
|
2500 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
| Drain Current-Max (ID) |
21 A
|
21 A
|
| Drain-source On Resistance-Max |
0.5 Ω
|
0.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-264AA
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e1
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
84 A
|
84 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu)
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Power Dissipation-Max (Abs) |
|
520 W
|
|
|
|
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