AP0903GMA vs FDB7030BLL86Z feature comparison

AP0903GMA Advanced Power Electronics Corp

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FDB7030BLL86Z Fairchild Semiconductor Corporation

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G2
Pin Count 5
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 29 mJ 220 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 60 A 60 A
Drain-source On Resistance-Max 0.009 Ω 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 4 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 195 A 180 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
JEDEC-95 Code TO-263AB

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