Datasheets
FDB7030BLL86Z by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Details for FDB7030BLL86Z by Fairchild Semiconductor Corporation

Overview of FDB7030BLL86Z by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for FDB7030BLL86Z

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FDB7030BLL86Z Part Data Attributes:

FDB7030BLL86Z Fairchild Semiconductor Corporation
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FDB7030BLL86Z Fairchild Semiconductor Corporation Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB7030BLL86Z

This table gives cross-reference parts and alternative options found for FDB7030BLL86Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB7030BLL86Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB7030BL N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL onsemi FDB7030BLL86Z vs FDB7030BL
Part Number Description Manufacturer Compare
FDB7030BL N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL onsemi FDB7030BLL86Z vs FDB7030BL
IRF3707Z Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier FDB7030BLL86Z vs IRF3707Z
FDB6670SS62Z Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation FDB7030BLL86Z vs FDB6670SS62Z
FDB6670SL86Z Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB7030BLL86Z vs FDB6670SL86Z
IRF3707PBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FDB7030BLL86Z vs IRF3707PBF
IRF3707SPBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FDB7030BLL86Z vs IRF3707SPBF
IRLB8721PBF Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG FDB7030BLL86Z vs IRLB8721PBF
IRL3103LPBF Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier FDB7030BLL86Z vs IRL3103LPBF
IRF3707 Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier FDB7030BLL86Z vs IRF3707
IRF3707ZS Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG FDB7030BLL86Z vs IRF3707ZS

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