AP03N70H vs AP03N70J-H feature comparison

AP03N70H Advanced Power Electronics Corp

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AP03N70J-H Advanced Power Electronics Corp

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Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP ADVANCED POWER ELECTRONICS CORP
Part Package Code TO-252 TO-251
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Pin Count 4 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 31 mJ 31 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 700 V 700 V
Drain Current-Max (ID) 2.5 A 2.5 A
Drain-source On Resistance-Max 4.4 Ω 4.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-251
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A 8 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 3

Compare AP03N70H with alternatives

Compare AP03N70J-H with alternatives