AM27C800-125DE
vs
K3P4C1000E-DC100
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ADVANCED MICRO DEVICES INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIP
DIP
Package Description
WDIP, DIP42,.6
DIP,
Pin Count
42
42
Reach Compliance Code
unknown
compliant
ECCN Code
3A001.A.2.C
EAR99
HTS Code
8542.32.00.61
8542.32.00.71
Access Time-Max
120 ns
100 ns
Alternate Memory Width
8
8
I/O Type
COMMON
JESD-30 Code
R-GDIP-T42
R-PDIP-T42
JESD-609 Code
e0
Length
54.864 mm
52.43 mm
Memory Density
8388608 bit
8388608 bit
Memory IC Type
UVPROM
MASK ROM
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
42
42
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
70 °C
Operating Temperature-Min
-55 °C
Organization
512KX16
512KX16
Output Characteristics
3-STATE
Package Body Material
CERAMIC, GLASS-SEALED
PLASTIC/EPOXY
Package Code
WDIP
DIP
Package Equivalence Code
DIP42,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE, WINDOW
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.588 mm
5.08 mm
Standby Current-Max
0.0001 A
Supply Current-Max
0.06 mA
0.08 mA
Supply Voltage-Max (Vsup)
5.25 V
5.5 V
Supply Voltage-Min (Vsup)
4.75 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
COMMERCIAL
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
15.24 mm
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare AM27C800-125DE with alternatives
Compare K3P4C1000E-DC100 with alternatives