AF2301PWA vs UT2301L-AE2-R feature comparison

AF2301PWA Diodes Incorporated

Buy Now Datasheet

UT2301L-AE2-R Unisonic Technologies Co Ltd

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC UNISONIC TECHNOLOGIES CO LTD
Package Description , SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 2.3 A 2.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.25 W 0.5 W
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 3 1
Part Package Code SOT-23
Pin Count 3
HTS Code 8541.21.00.95
DS Breakdown Voltage-Min 20 V
Drain-source On Resistance-Max 0.13 Ω
Feedback Cap-Max (Crss) 56 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 0.5 W
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare UT2301L-AE2-R with alternatives