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934060065112 vs BLF6G20LS-110 feature comparison

934060065112 NXP Semiconductors

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BLF6G20LS-110 Ampleon

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS AMPLEON NETHERLANDS B V
Package Description FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 65 V 65 V
Drain Current-Max (ID) 13 A 29 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND L BAND
JESD-30 Code R-CDFM-F2 R-CDFP-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLATPACK
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Factory Lead Time 4 Weeks
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare 934060065112 with alternatives

Compare BLF6G20LS-110 with alternatives