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934058279127 vs PHB110NQ08T,118 feature comparison

934058279127 Nexperia

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PHB110NQ08T,118 Nexperia

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01 2017-02-01
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 560 mJ 560 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V 75 V
Drain Current-Max (ID) 75 A 75 A
Drain-source On Resistance-Max 0.009 Ω 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 440 A 440 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Part Package Code D2PAK
Pin Count 3
Manufacturer Package Code SOT404
Samacsys Manufacturer Nexperia
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare 934058279127 with alternatives

Compare PHB110NQ08T,118 with alternatives