PHB110NQ08T,118
vs
BUK769R6-80E,118
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
D2PAK
D2PAK
Package Description
PLASTIC, D2PAK-3
Pin Count
3
3
Manufacturer Package Code
SOT404
SOT404
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Factory Lead Time
4 Weeks
4 Weeks
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
560 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
75 V
Drain Current-Max (ID)
75 A
75 A
Drain-source On Resistance-Max
0.009 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
182 W
Pulsed Drain Current-Max (IDM)
440 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
2
2
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