934055787115
vs
PUMH24/T1
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
2017-02-01
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC)
0.1 A
0.02 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
6
6
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
230 MHz
Base Number Matches
2
2
Pbfree Code
Yes
Part Package Code
SC-88
Pin Count
6
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
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Compare PUMH24/T1 with alternatives