934054620135
vs
PHT6N06T,135
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
SC-73
SC-73
Package Description
PLASTIC, SMD, SC-73, 4 PIN
PLASTIC, SC-73, 4 PIN
Pin Count
4
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
0.15 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
22 A
22 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Manufacturer Package Code
SOT223
HTS Code
8541.29.00.75
Factory Lead Time
4 Weeks
Additional Feature
ESD PROTECTED
Avalanche Energy Rating (Eas)
15 mJ
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
1.8 W
Time@Peak Reflow Temperature-Max (s)
30
Compare 934054620135 with alternatives
Compare PHT6N06T,135 with alternatives
PHT6N06T,135 vs PHT6N06TT/R
PHT6N06T,135 vs PHT6N06T/T3
PHT6N06T,135 vs PHT6N06T
PHT6N06T,135 vs BUK78150-55A,135
PHT6N06T,135 vs BUK98150-55,135
PHT6N06T,135 vs 934056194115
PHT6N06T,135 vs BUK98150-55A
PHT6N06T,135 vs BUK98150-55/CU
PHT6N06T,135 vs PHT6N06LTT/R