934000510115
vs
BSP126T/R
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
250 V
|
|
| Drain Current-Max (ID) |
0.225 A
|
|
| Drain-source On Resistance-Max |
15 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
15 pF
|
|
| JESD-30 Code |
R-PDSO-G4
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
|
| Number of Terminals |
4
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
3
|
| Package Description |
|
,
|
| Date Of Intro |
|
2017-02-01
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 934000510115 with alternatives
Compare BSP126T/R with alternatives