933467630112 vs BC879,112 feature comparison

933467630112 NXP Semiconductors

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BC879,112 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code TO-92 TO-92
Package Description CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 1000 2000
JEDEC-95 Code TO-92 TO-92
JESD-30 Code O-PBCY-T3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Samacsys Manufacturer NXP
Additional Feature BUILT-IN BIAS RESISTOR
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.8 W
Terminal Finish TIN
VCEsat-Max 1.8 V

Compare 933467630112 with alternatives

Compare BC879,112 with alternatives