933379120143
vs
1N5236B-T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
DIODES INC
Package Description
O-LALF-W2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
7.5 V
7.5 V
Reverse Current-Max
3 µA
3 µA
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Temp Coeff-Max
4.35 mV/°C
4.35 mV/°C
Voltage Tol-Max
5%
5%
Working Test Current
20 mA
20 mA
Base Number Matches
1
1
Pbfree Code
Rohs Code
Part Package Code
DO-35
Pin Count
2
Samacsys Manufacturer
Diodes Incorporated
Dynamic Impedance-Max
6 Ω
Forward Voltage-Max (VF)
1.1 V
JESD-609 Code
e2
Knee Impedance-Max
500 Ω
Peak Reflow Temperature (Cel)
260
Reverse Test Voltage
6 V
Terminal Finish
TIN SILVER
Time@Peak Reflow Temperature-Max (s)
10
Compare 933379120143 with alternatives
Compare 1N5236B-T with alternatives