8413202RX
vs
8413209RX
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
PYRAMID SEMICONDUCTOR CORP
|
PYRAMID SEMICONDUCTOR CORP
|
| Package Description |
DIP,
|
DIP,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
40 ns
|
45 ns
|
| JESD-30 Code |
R-CDIP-T20
|
R-GDIP-T20
|
| Length |
25.4 mm
|
25.3365 mm
|
| Memory Density |
16384 bit
|
16384 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
1
|
1
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
20
|
20
|
| Number of Words |
16384 words
|
16384 words
|
| Number of Words Code |
16000
|
16000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
16KX1
|
16KX1
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Qualified
|
Qualified
|
| Screening Level |
MIL-STD-883 Class B (Modified)
|
MIL-STD-883
|
| Seated Height-Max |
3.124 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
8
|
3
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
20
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 8413202RX with alternatives
Compare 8413209RX with alternatives