71257S45DB vs 5962-8854402LA feature comparison

71257S45DB Integrated Device Technology Inc

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5962-8854402LA Pyramid Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC PYRAMID SEMICONDUCTOR CORP
Reach Compliance Code not_compliant compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 45 ns 45 ns
I/O Type SEPARATE SEPARATE
JESD-30 Code R-XDIP-T24 R-CDIP-T24
JESD-609 Code e0 e0
Memory Density 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 1 1
Number of Terminals 24 24
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 256KX1 256KX1
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Equivalence Code DIP24,.3 DIP24,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Standby Current-Max 0.02 A 0.0009 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.12 mA 0.1 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Package Description DIP, DIP24,.3
Number of Functions 1
Seated Height-Max 5.08 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Width 7.62 mm

Compare 71257S45DB with alternatives

Compare 5962-8854402LA with alternatives