6301-1N
vs
HM1-7611A2
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MONOLITHIC MEMORIES
|
HARRIS SEMICONDUCTOR
|
| Package Description |
DIP-16
|
DIP, DIP16,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
45 ns
|
65 ns
|
| JESD-30 Code |
R-PDIP-T16
|
R-XDIP-T16
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
16384 bit
|
1024 bit
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
4
|
| Number of Functions |
1
|
|
| Number of Terminals |
16
|
16
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
2000
|
256
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
2KX8
|
256X4
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP16,.3
|
DIP16,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
TTL
|
TTL
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.32.00.71
|
| Supply Current-Max |
|
0.13 mA
|
|
|
|
Compare 6301-1N with alternatives
Compare HM1-7611A2 with alternatives