5962-8855202NX
vs
5962-8855202NX
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TELEDYNE E2V (UK) LTD
|
PYRAMID SEMICONDUCTOR CORP
|
| Package Description |
DFP,
|
DFP,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
70 ns
|
70 ns
|
| JESD-30 Code |
R-GDFP-F28
|
R-GDFP-F28
|
| Length |
18.288 mm
|
18.288 mm
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DFP
|
DFP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLATPACK
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
2.921 mm
|
2.921 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
12.446 mm
|
12.446 mm
|
| Base Number Matches |
1
|
1
|
| Screening Level |
|
MIL-STD-883 Class B (Modified)
|
|
|
|
Compare 5962-8855202NX with alternatives
Compare 5962-8855202NX with alternatives