3.0SMCJ8.5A-GT3
vs
SMLJ8.5
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
unknown
Breakdown Voltage-Max
10.82 V
11.5 V
Breakdown Voltage-Min
9.44 V
9.44 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8.5 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
4
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW INDUCTANCE
Breakdown Voltage-Nom
10.5 V
Clamping Voltage-Max
15.9 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
25 µA
Compare 3.0SMCJ8.5A-GT3 with alternatives
Compare SMLJ8.5 with alternatives