SMLJ8.5 vs SMLJ8.5A feature comparison

SMLJ8.5 International Semiconductor Inc

Buy Now Datasheet

SMLJ8.5A International Semiconductor Inc

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC INTERNATIONAL SEMICONDUCTOR INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE LOW INDUCTANCE
Breakdown Voltage-Max 11.5 V 10.4 V
Breakdown Voltage-Min 9.44 V 9.44 V
Breakdown Voltage-Nom 10.5 V 9.92 V
Clamping Voltage-Max 15.9 V 14.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Reverse Current-Max 25 µA 25 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 5

Compare SMLJ8.5 with alternatives

Compare SMLJ8.5A with alternatives