3.0SMCJ8.5A-G
vs
MASMLJ8.5A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROCHIP TECHNOLOGY INC
Part Package Code
DO-214AB
Package Description
R-PDSO-C2
Pin Count
2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
10.82 V
10.4 V
Breakdown Voltage-Min
9.44 V
9.44 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
8.5 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
9.92 V
Clamping Voltage-Max
14.4 V
JESD-609 Code
e0
Power Dissipation-Max
1.61 W
Terminal Finish
TIN LEAD
Compare 3.0SMCJ8.5A-G with alternatives
Compare MASMLJ8.5A with alternatives