MASMLJ8.5A
vs
MASMLJ8.5TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY
TR, 7 INCH: 750
Breakdown Voltage-Max
10.4 V
11.5 V
Breakdown Voltage-Min
9.44 V
9.44 V
Breakdown Voltage-Nom
9.92 V
10.47 V
Clamping Voltage-Max
14.4 V
91.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.61 W
1.61 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
8.5 V
8.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Part Package Code
DO-214AB
Package Description
R-PDSO-C2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare MASMLJ8.5A with alternatives
Compare MASMLJ8.5TR with alternatives