3.0SMCJ60_R1_10001 vs 3.0SMCJ60-AU_R1_000A1 feature comparison

3.0SMCJ60_R1_10001 PanJit Semiconductor

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3.0SMCJ60-AU_R1_000A1 PanJit Semiconductor

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 84.5 V 84.5 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 75.6 V
Clamping Voltage-Max 107 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

Compare 3.0SMCJ60_R1_10001 with alternatives

Compare 3.0SMCJ60-AU_R1_000A1 with alternatives