3.0SMCJ54CA-A
vs
SMDJ54CAHV6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
66.3 V
66.3 V
Breakdown Voltage-Min
60 V
60 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
AEC-Q101
AEC-Q101
Rep Pk Reverse Voltage-Max
54 V
54 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
PURE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Breakdown Voltage-Nom
63.15 V
Clamping Voltage-Max
87.1 V
JEDEC-95 Code
DO-214AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Reverse Current-Max
1 µA
Reverse Test Voltage
54 V
Time@Peak Reflow Temperature-Max (s)
30
Compare 3.0SMCJ54CA-A with alternatives
Compare SMDJ54CAHV6G with alternatives