3.0SMCJ48
vs
SMDJ48A-AT/TR7
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
YAGEO CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
65.1 V
58.9 V
Breakdown Voltage-Min
53.3 V
53.3 V
Breakdown Voltage-Nom
59.2 V
56.1 V
Clamping Voltage-Max
85.5 V
77.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-202
AEC-Q101
Rep Pk Reverse Voltage-Max
48 V
48 V
Reverse Current-Max
5 µA
2 µA
Reverse Test Voltage
48 V
48 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
19
3
Rohs Code
Factory Lead Time
18 Weeks
Date Of Intro
2019-04-29
JEDEC-95 Code
DO-214AB
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Time@Peak Reflow Temperature-Max (s)
40
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