3.0SMCJ48
vs
3.0SMCJ48_R2_10001
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
65.1 V
67.5 V
Breakdown Voltage-Min
53.3 V
53.3 V
Breakdown Voltage-Nom
59.2 V
60.4 V
Clamping Voltage-Max
85.5 V
85.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-202
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
48 V
48 V
Reverse Current-Max
5 µA
Reverse Test Voltage
48 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
19
1
Pbfree Code
Rohs Code
Package Description
R-PDSO-C2
JEDEC-95 Code
DO-214AB
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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