3.0SMCJ30A-13 vs 3.0SMCJ30-G feature comparison

3.0SMCJ30A-13 Diodes Incorporated

Buy Now Datasheet

3.0SMCJ30-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Manufacturer Package Code SMC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 20 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 36.8 V 42.2 V
Breakdown Voltage-Min 33.3 V 33.3 V
Breakdown Voltage-Nom 35.05 V
Clamping Voltage-Max 48.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 5 µA
Reverse Test Voltage 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
JEDEC-95 Code DO-214AB
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 3.0SMCJ30A-13 with alternatives

Compare 3.0SMCJ30-G with alternatives