3.0SMCJ30-G vs 3.0SMCJ30A-13 feature comparison

3.0SMCJ30-G Sangdest Microelectronics (Nanjing) Co Ltd

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3.0SMCJ30A-13 Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD DIODES INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 42.2 V 36.8 V
Breakdown Voltage-Min 33.3 V 33.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Pbfree Code No
Pin Count 2
Manufacturer Package Code SMC
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 20 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 35.05 V
Clamping Voltage-Max 48.4 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 5 W
Reverse Current-Max 5 µA
Reverse Test Voltage 30 V
Terminal Finish MATTE TIN

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