2SK2735(L)
vs
STD17NE03L-1
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
STMICROELECTRONICS
|
| Part Package Code |
SC-63
|
TO-251AA
|
| Package Description |
IN-LINE, R-PSIP-T3
|
TO-251, IPAK-3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Drain-source On Resistance-Max |
0.05 Ω
|
0.06 Ω
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| Avalanche Energy Rating (Eas) |
|
50 mJ
|
| Case Connection |
|
DRAIN
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
17 A
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
TO-251AA
|
| Number of Elements |
|
1
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
175 °C
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
35 W
|
| Pulsed Drain Current-Max (IDM) |
|
68 A
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare 2SK2735(L) with alternatives
Compare STD17NE03L-1 with alternatives