2SK2201 vs FS2ASJ-3 feature comparison

2SK2201 Toshiba America Electronic Components

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FS2ASJ-3 Renesas Electronics Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code End Of Life Active
Ihs Manufacturer TOSHIBA CORP RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Date Of Intro 1994-01-01
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 150 V
Drain Current-Max (ID) 3 A 2 A
Drain-source On Resistance-Max 0.45 Ω 0.81 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 20 W 20 W
Pulsed Drain Current-Max (IDM) 12 A 8 A
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 12 1
Pin Count 3
Qualification Status Not Qualified

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