Part Details for FS2ASJ-3 by Renesas Electronics Corporation
Overview of FS2ASJ-3 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FS2ASJ-3
FS2ASJ-3 CAD Models
FS2ASJ-3 Part Data Attributes
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FS2ASJ-3
Renesas Electronics Corporation
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Datasheet
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FS2ASJ-3
Renesas Electronics Corporation
2A, 150V, 0.81ohm, N-CHANNEL, Si, POWER, MOSFET, MP-3, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.81 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FS2ASJ-3
This table gives cross-reference parts and alternative options found for FS2ASJ-3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS2ASJ-3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1252 | TRANSISTOR 3 A, 120 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8H1A, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FS2ASJ-3 vs 2SK1252 |
| 2SK1861-4061 | Power Field-Effect Transistor, 4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 | Shindengen Electronic Manufacturing Co Ltd | FS2ASJ-3 vs 2SK1861-4061 |
| 2SK1113 | TRANSISTOR 3 A, 120 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | FS2ASJ-3 vs 2SK1113 |