2SK1864
vs
IRF840ASTRRPBF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
TOSHIBA CORP
VISHAY SILICONIX
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
100 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Rohs Code
Part Package Code
D2PAK
Pin Count
4
Avalanche Energy Rating (Eas)
510 mJ
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Pulsed Drain Current-Max (IDM)
32 A
Terminal Finish
MATTE TIN
Compare 2SK1864 with alternatives
Compare IRF840ASTRRPBF with alternatives