There are no models available for this part yet.
Overview of 2SK1864 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2SK1864 by Toshiba America Electronic Components
Part Data Attributes for 2SK1864 by Toshiba America Electronic Components
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
TOSHIBA CORP
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
8 A
|
Drain-source On Resistance-Max
|
0.85 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
100 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 2SK1864
This table gives cross-reference parts and alternative options found for 2SK1864. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1864, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF840STRL | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SK1864 vs IRF840STRL |
IRF840STRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | 2SK1864 vs IRF840STRRPBF |
STB9NB50T4 | 8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | 2SK1864 vs STB9NB50T4 |
IRF840ASTRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | 2SK1864 vs IRF840ASTRRPBF |
PHB8N50 | TRANSISTOR 8.7 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | 2SK1864 vs PHB8N50 |
2SK1315(S)TR | 8A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | 2SK1864 vs 2SK1315(S)TR |
IRF840STRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | 2SK1864 vs IRF840STRRPBF |
2SK1541(S)TL | Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | 2SK1864 vs 2SK1541(S)TL |
STB8NA50T4 | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN | STMicroelectronics | 2SK1864 vs STB8NA50T4 |
2SK1540S | 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK1864 vs 2SK1540S |