2SK1504-01L vs STB8NC50 feature comparison

2SK1504-01L Fuji Electric Co Ltd

Buy Now Datasheet

STB8NC50 STMicroelectronics

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD STMICROELECTRONICS
Package Description IN-LINE, R-PSIP-T3 D2PAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 10 A 8 A
Drain-source On Resistance-Max 0.9 Ω 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 80 W 135 W
Pulsed Drain Current-Max (IDM) 35 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Avalanche Energy Rating (Eas) 600 mJ
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare 2SK1504-01L with alternatives

Compare STB8NC50 with alternatives