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2SB1188Q vs 2SB1188Q feature comparison

2SB1188Q Galaxy Microelectronics

Buy Now Datasheet

2SB1188Q Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 2 A 2 A
Collector-Emitter Voltage-Max 32 V 32 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 82 82
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type PNP PNP
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
Base Number Matches 2 1
Package Description SMALL OUTLINE, R-PSSO-F3
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare 2SB1188Q with alternatives

Compare 2SB1188Q with alternatives