2SA1201YTE12L
vs
2SA1201Y
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
TOSHIBA CORP
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
|
| Package Description |
SMALL OUTLINE, R-PSSO-F3
|
SOT-89, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.8 A
|
0.8 A
|
| Collector-Base Capacitance-Max |
30 pF
|
30 pF
|
| Collector-Emitter Voltage-Max |
120 V
|
120 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
120
|
120
|
| JESD-30 Code |
R-PSSO-F3
|
R-PSSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
120 MHz
|
120 MHz
|
| VCEsat-Max |
1 V
|
1 V
|
| Base Number Matches |
1
|
4
|
| HTS Code |
|
8541.21.00.75
|
| Power Dissipation Ambient-Max |
|
0.5 W
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
|
|
|
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