2PB1219AS
vs
2PB1219S-TAPE-7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1995-02-01
Collector Current-Max (IC)
0.5 A
0.5 A
Collector-Base Capacitance-Max
15 pF
15 pF
Collector-Emitter Voltage-Max
50 V
25 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
170
40
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
140 MHz
140 MHz
VCEsat-Max
0.6 V
0.6 V
Base Number Matches
3
1
Compare 2PB1219AS with alternatives
Compare 2PB1219S-TAPE-7 with alternatives