2N7227U
vs
JANTV2N7227
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
ADVANCED POWER TECHNOLOGY INC
Part Package Code
TO-276AB
Package Description
ROHS COMPLIANT, U-PKG-3
FLANGE MOUNT, S-MSFM-P3
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.415 Ω
0.415 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-276AB
TO-254AA
JESD-30 Code
R-XBCC-N3
S-MSFM-P3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
METAL
Package Shape
RECTANGULAR
SQUARE
Package Style
CHIP CARRIER
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
NO LEAD
PIN/PEG
Terminal Position
BOTTOM
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
700 mJ
Pulsed Drain Current-Max (IDM)
56 A
Reference Standard
MIL-S-19500/592
Compare 2N7227U with alternatives
Compare JANTV2N7227 with alternatives