2N7107 vs 2SK1875 feature comparison

2N7107 Solitron Devices Inc

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2SK1875 Toshiba America Electronic Components

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SOLITRON DEVICES INC TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 10 V
Drain Current-Max (ID) 0.05 A
Drain-source On Resistance-Max 50 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JUNCTION
Feedback Cap-Max (Crss) 2 pF 3 pF
JEDEC-95 Code TO-72
JESD-30 Code O-MBCY-W4 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 4 3
Operating Mode ENHANCEMENT MODE DEPLETION MODE
Operating Temperature-Max 125 °C 125 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 20
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
JESD-609 Code e0
Terminal Finish TIN LEAD
Transistor Application AMPLIFIER

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