2N6802R1
vs
2N6802
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SEMELAB LTD
HARRIS SEMICONDUCTOR
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
0.35 mJ
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
2.5 A
3.5 A
Drain-source On Resistance-Max
1.725 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e1
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
11 A
11 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
6
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Feedback Cap-Max (Crss)
60 pF
Operating Temperature-Min
-55 °C
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
Compare 2N6802R1 with alternatives
Compare 2N6802 with alternatives