2N6802
vs
2N6802-JQR-A
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MOTOROLA INC
|
SEMELAB LTD
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
Drain Current-Max (ID) |
3.5 A
|
2.5 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
25 W
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Base Number Matches |
12
|
2
|
Pbfree Code |
|
No
|
Part Package Code |
|
BCY
|
Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
|
2
|
Avalanche Energy Rating (Eas) |
|
0.35 mJ
|
DS Breakdown Voltage-Min |
|
500 V
|
Drain-source On Resistance-Max |
|
1.725 Ω
|
JEDEC-95 Code |
|
TO-205AF
|
JESD-30 Code |
|
O-MBCY-W3
|
Number of Terminals |
|
3
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
11 A
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
WIRE
|
Terminal Position |
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Element Material |
|
SILICON
|
|
|
|
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