2N6802
vs
IRFF430-JQR-BR1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
SEMELAB LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
3.5 A
2.5 A
Drain-source On Resistance-Max
1.5 Ω
1.725 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
60 pF
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
11 A
11 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN SILVER COPPER
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
Base Number Matches
6
1
Pbfree Code
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
Pin Count
2
Avalanche Energy Rating (Eas)
0.35 mJ
Compare 2N6802 with alternatives
Compare IRFF430-JQR-BR1 with alternatives