2N6788.MODR1
vs
JANTX2N6788
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TT ELECTRONICS PLC
INFINEON TECHNOLOGIES AG
Package Description
CYLINDRICAL, O-MBCY-W3
HERMETIC SEALED, MODIFIED TO-39, 3 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
6 A
6 A
Drain-source On Resistance-Max
0.345 Ω
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e1
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
24 A
24 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
9
Factory Lead Time
4 Weeks
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
0.242 mJ
Power Dissipation-Max (Abs)
20 W
Reference Standard
MIL-19500/555
Compare 2N6788.MODR1 with alternatives
Compare JANTX2N6788 with alternatives