2N6729/D81Z
vs
2N6729
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH CURRENT DRIVER
|
HIGH CURRENT DRIVER
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| JEDEC-95 Code |
TO-237AA
|
TO-237AA
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
50 MHz
|
50 MHz
|
| VCEsat-Max |
0.35 V
|
0.35 V
|
| Base Number Matches |
1
|
9
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.75
|
| Collector-Base Capacitance-Max |
|
30 pF
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
2 W
|
| Power Dissipation-Max (Abs) |
|
2 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N6729/D81Z with alternatives
Compare 2N6729 with alternatives