2N6484
vs
SI3457BDV-T1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SOLITRON DEVICES INC
VISHAY SILICONIX
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS
SINGLE WITH BUILT-IN DIODE
FET Technology
JUNCTION
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-71
JESD-30 Code
O-MBCY-W6
R-PDSO-G6
Number of Elements
2
1
Number of Terminals
6
6
Operating Mode
DEPLETION MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
0.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.7 A
Drain-source On Resistance-Max
0.054 Ω
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare 2N6484 with alternatives
Compare SI3457BDV-T1 with alternatives