2N6298-JQR-BR1
vs
2N6299-JQR-B
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
SEMELAB LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2015-12-17
EFUP
50
Conflict Mineral Status
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Collector Current-Max (IC)
8 A
8 A
Collector-Emitter Voltage-Max
60 V
80 V
Configuration
SINGLE
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
750
100
JEDEC-95 Code
TO-66
TO-66
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e1
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
4 MHz
4 MHz
Base Number Matches
1
2
Pbfree Code
No
Package Description
FLANGE MOUNT, O-MBFM-P2
Operating Temperature-Max
200 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Compare 2N6298-JQR-BR1 with alternatives
Compare 2N6299-JQR-B with alternatives